Infineon 256kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24V02A-G

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Subtotal (1 pack of 2 units)*

£12.00

(exc. VAT)

£14.40

(inc. VAT)

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Per Pack*
2 - 8£6.00£12.00
10 - 18£4.77£9.54
20 - 98£4.645£9.29
100 - 498£4.525£9.05
500 +£4.41£8.82

*price indicative

Packaging Options:
RS Stock No.:
124-2983
Mfr. Part No.:
FM24V02A-G
Brand:
Infineon
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Brand

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Serial-I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.47mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.47mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2 V

Number of Words

32K

Number of Bits per Word

8bit

Minimum Operating Temperature

-40 °C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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