Infineon 256kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24V02A-G

Bulk discount available

Subtotal (1 pack of 2 units)*

£12.00

(exc. VAT)

£14.40

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 878 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8£6.00£12.00
10 - 18£4.77£9.54
20 - 98£4.645£9.29
100 - 498£4.525£9.05
500 +£4.41£8.82

*price indicative

Packaging Options:
RS Stock No.:
124-2983
Mfr. Part No.:
FM24V02A-G
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Serial-I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.47mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.47mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2 V

Number of Words

32K

Number of Bits per Word

8bit

Minimum Operating Temperature

-40 °C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Related links