Infineon 256kbit I2C FRAM Memory 8-Pin SOIC, FM24V02A-G

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Subtotal (1 tube of 97 units)*

£434.754

(exc. VAT)

£521.666

(inc. VAT)

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Units
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Per Tube*
97 - 97£4.482£434.75
194 - 194£4.361£423.02
291 - 485£4.246£411.86
582 - 970£4.137£401.29
1067 +£4.034£391.30

*price indicative

RS Stock No.:
188-5403
Mfr. Part No.:
FM24V02A-G
Brand:
Infineon
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Brand

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.48mm

Maximum Operating Temperature

+85 °C

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Number of Words

32k

Number of Bits per Word

8bit

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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