Infineon 256kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24W256-G
- RS Stock No.:
- 125-4217
- Mfr. Part No.:
- FM24W256-G
- Brand:
- Infineon
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Units | Per unit |
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1 - 9 | £5.06 |
10 - 49 | £3.94 |
50 - 99 | £3.84 |
100 - 499 | £3.61 |
500 + | £3.52 |
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- RS Stock No.:
- 125-4217
- Mfr. Part No.:
- FM24W256-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 256kbit | |
Organisation | 32K x 8 bit | |
Interface Type | Serial-2 Wire, Serial-I2C | |
Data Bus Width | 8bit | |
Maximum Random Access Time | 3000ns | |
Mounting Type | Surface Mount | |
Package Type | SOIC | |
Pin Count | 8 | |
Dimensions | 4.97 x 3.98 x 1.48mm | |
Length | 4.97mm | |
Maximum Operating Supply Voltage | 5.5 V | |
Width | 3.98mm | |
Height | 1.48mm | |
Maximum Operating Temperature | +85 °C | |
Number of Bits per Word | 8bit | |
Number of Words | 32K | |
Minimum Operating Supply Voltage | 2.7 V | |
Automotive Standard | AEC-Q100 | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type Serial-2 Wire, Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Number of Words 32K | ||
Minimum Operating Supply Voltage 2.7 V | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40 °C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
15 μA (typ) standby current
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
15 μA (typ) standby current
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 256kbit I2C FRAM Memory 8-Pin SOIC, FM24W256-G
- Infineon 256kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24W256-GTR
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