Infineon 16kbit I2C FRAM Memory 8-Pin DFN, FM24CL16B-DG

View all FRAM Memory
Bulk discount available

Subtotal (1 tube of 81 units)*

£117.45

(exc. VAT)

£140.94

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,377 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
81 - 81£1.45£117.45
162 - 243£1.344£108.86
324 - 486£1.31£106.11
567 +£1.278£103.52

*price indicative

RS Stock No.:
188-5399
Mfr. Part No.:
FM24CL16B-DG
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Memory Size

16kbit

Organisation

2K x 8 bit

Interface Type

I2C

Data Bus Width

8bit

Maximum Random Access Time

3000ns

Mounting Type

Surface Mount

Package Type

DFN

Pin Count

8

Dimensions

4.5 x 4 x 0.75mm

Length

4.5mm

Maximum Operating Supply Voltage

3.65 V

Width

4mm

Height

0.75mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Number of Words

2k

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Related links