Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG

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Subtotal (1 tube of 27 units)*

£252.531

(exc. VAT)

£303.048

(inc. VAT)

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Per Tube*
27 - 27£9.353£252.53
54 - 81£9.231£249.24
108 - 243£8.231£222.24
270 - 486£8.006£216.16
513 +£7.81£210.87

*price indicative

RS Stock No.:
188-5394
Mfr. Part No.:
FM18W08-SG
Brand:
Infineon
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Brand

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Length

18.11mm

Width

7.62mm

Maximum Operating Supply Voltage

5.5 V

Height

2.37mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2.7 V

Minimum Operating Temperature

-40 °C

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8bit

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K x 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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