Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG
- RS Stock No.:
- 188-5394
- Mfr. Part No.:
- FM18W08-SG
- Brand:
- Infineon
View all FRAM Memory
Available to back order for despatch 16/06/2023
Price Each (In a Tube of 27)
£9.506
(exc. VAT)
£11.407
(inc. VAT)
Units | Per unit | Per Tube* |
27 - 27 | £9.506 | £256.662 |
54 - 81 | £9.383 | £253.341 |
108 - 243 | £8.365 | £225.855 |
270 - 486 | £8.137 | £219.699 |
513 + | £7.937 | £214.299 |
*price indicative |
- RS Stock No.:
- 188-5394
- Mfr. Part No.:
- FM18W08-SG
- Brand:
- Infineon
- COO (Country of Origin):
- US
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K ´ 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K ´ 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Specifications
Attribute | Value |
Memory Size | 256kbit |
Organisation | 32K x 8 bit |
Interface Type | Parallel |
Data Bus Width | 8bit |
Maximum Random Access Time | 70ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 28 |
Dimensions | 18.11 x 7.62 x 2.37mm |
Length | 18.11mm |
Maximum Operating Supply Voltage | 5.5 V |
Width | 7.62mm |
Height | 2.37mm |
Maximum Operating Temperature | +85 °C |
Automotive Standard | AEC-Q100 |
Number of Words | 32k |
Minimum Operating Supply Voltage | 2.7 V |
Minimum Operating Temperature | -40 °C |
Number of Bits per Word | 8bit |