The Infineon FRAM is a 8 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The FRAM memory is non volatile due to its unique ferroelectric memory process.

Low power consumption
SRAM and EEPROM compatible
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Superior for moisture and shock with vibration