onsemi MJ11015G 1 Darlington Transistor PNP, -20 A 120 V HFE:200, 3-Pin TO-204

Subtotal (1 tray of 100 units)*

£500.60

(exc. VAT)

£600.70

(inc. VAT)

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  • 100 unit(s) ready to ship
  • Plus 100 unit(s) shipping from 15 September 2026
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Units
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Per Tray*
100 +£5.006£500.60

*price indicative

RS Stock No.:
103-5055
Mfr. Part No.:
MJ11015G
Brand:
onsemi
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Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

-20A

Maximum Collector Emitter Voltage Vceo

120V

Package Type

TO-204

Mount Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

200

Maximum Power Dissipation Pd

200W

Transistor Polarity

PNP

Maximum Emitter Base Voltage VEBO

5V

Maximum Collector Base Voltage VCBO

120V

Maximum Collector Emitter Saturation Voltage VceSAT

3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Length

39.37mm

Series

MJ11012

Height

8.51mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CZ
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.

The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain

• Monolithic Construction

• Built-in Base Emitter Shunt Resistor

• Junction Temperature: to +200°C

• PNP Polarity

Versions Available:

688-1502 - pack of 2

103-5055 - tray of 100

PNP Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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