onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

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Subtotal (1 tray of 100 units)*

£351.00

(exc. VAT)

£421.00

(inc. VAT)

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Per unit
Per Tray*
100 +£3.51£351.00

*price indicative

RS Stock No.:
122-0071
Mfr. Part No.:
MJ11016G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

120 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

200

Maximum Base Emitter Saturation Voltage

5 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

4 V

Length

39.37mm

Maximum Operating Temperature

+200 °C

Height

8.51mm

Minimum Operating Temperature

-55 °C

Width

26.67mm

Dimensions

39.37 x 26.67 x 8.51mm

COO (Country of Origin):
CZ

NPN Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity

Versions Available:
463-000 - pack of 2
100-7565 - tray of 100

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