onsemi MJ11016G 1 Darlington Transistor NPN, 30 A 120 V HFE:200, 3-Pin TO-204
- RS Stock No.:
- 463-000
- Distrelec Article No.:
- 304-37-286
- Mfr. Part No.:
- MJ11016G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.73
(exc. VAT)
£11.676
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 38 unit(s) ready to ship
- Plus 42 unit(s) ready to ship from another location
- Plus 114 unit(s) shipping from 08 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.865 | £9.73 |
| 20 + | £4.195 | £8.39 |
*price indicative
- RS Stock No.:
- 463-000
- Distrelec Article No.:
- 304-37-286
- Mfr. Part No.:
- MJ11016G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 120V | |
| Package Type | TO-204 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain hFE | 200 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Operating Temperature | 200°C | |
| Height | 8.51mm | |
| Length | 39.37mm | |
| Series | MJ1101 | |
| Standards/Approvals | No | |
| Maximum Collector Cut-off Current | 1mA | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 120V | ||
Package Type TO-204 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain hFE 200 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Operating Temperature 200°C | ||
Height 8.51mm | ||
Length 39.37mm | ||
Series MJ1101 | ||
Standards/Approvals No | ||
Maximum Collector Cut-off Current 1mA | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
Versions Available:
463-000 - pack of 2
100-7565 - tray of 100
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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