onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

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Subtotal (1 tray of 100 units)*

£500.60

(exc. VAT)

£600.70

(inc. VAT)

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Temporarily out of stock
  • 100 unit(s) shipping from 12 November 2025
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Per Tray*
100 +£5.006£500.60

*price indicative

RS Stock No.:
103-5055
Mfr. Part No.:
MJ11015G
Brand:
onsemi
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Brand

onsemi

Transistor Type

PNP

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

120 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

200

Maximum Base Emitter Saturation Voltage

5 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

4 V

Maximum Operating Temperature

+200 °C

Dimensions

39.37 x 26.67 x 8.51mm

Minimum Operating Temperature

-55 °C

Height

8.51mm

Width

26.67mm

Length

39.37mm

COO (Country of Origin):
CZ

PNP Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

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