Infineon Bipolar Transistor, 65 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

£261.00

(exc. VAT)

£312.00

(inc. VAT)

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Temporarily out of stock
  • 9,000 unit(s) shipping from 15 July 2026
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Units
Per unit
Per Reel*
3000 - 3000£0.087£261.00
6000 - 12000£0.083£249.00
15000 +£0.08£240.00

*price indicative

RS Stock No.:
258-6996
Mfr. Part No.:
BFR183E6327HTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Maximum Transition Frequency ft

8GHz

Maximum Power Dissipation Pd

450mW

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Pin Count

3

Maximum Operating Temperature

150°C

Length

2.9mm

Series

BFR183

Standards/Approvals

RoHS

Height

1mm

Automotive Standard

AEC-Q101

The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications

Pb free RoHS compliant package

VCEO max is 12 V

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