Infineon Bipolar Transistor, 35 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

£279.00

(exc. VAT)

£336.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000£0.093£279.00
6000 - 12000£0.088£264.00
15000 +£0.085£255.00

*price indicative

RS Stock No.:
258-6993
Mfr. Part No.:
BFR182E6327HTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Minimum Operating Temperature

-65°C

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Power Dissipation Pd

250mW

Maximum Transition Frequency ft

8GHz

Pin Count

3

Maximum Operating Temperature

150°C

Length

2.9mm

Height

1mm

Width

2.4 mm

Series

BFR182

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package

VCEO max is 12 V

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