Infineon BFR182E6327HTSA1 Bipolar Transistor, 35 mA NPN, 20 V, 3-Pin SOT-23

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£3.45

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£4.15

(inc. VAT)

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25 - 225£0.138£3.45
250 - 600£0.131£3.28
625 - 1225£0.126£3.15
1250 - 2475£0.12£3.00
2500 +£0.082£2.05

*price indicative

Packaging Options:
RS Stock No.:
258-7726
Distrelec Article No.:
304-40-491
Mfr. Part No.:
BFR182E6327HTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

250mW

Maximum Emitter Base Voltage VEBO

2V

Transistor Polarity

NPN

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-65°C

Maximum Operating Temperature

150°C

Pin Count

3

Length

2.9mm

Height

1mm

Width

2.4 mm

Standards/Approvals

RoHS

Series

BFR182

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package

VCEO max is 12 V

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