Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP

Subtotal (1 pack of 50 units)*

£7.75

(exc. VAT)

£9.30

(inc. VAT)

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50 +£0.155£7.75

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Packaging Options:
RS Stock No.:
216-8352
Mfr. Part No.:
BFP640FH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

NPN RF Bipolar Transistor

Maximum DC Collector Current Idc

50mA

Maximum Collector Emitter Voltage Vceo

4V

Package Type

TSFP

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Maximum Power Dissipation Pd

200mW

Maximum Transition Frequency ft

42GHz

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

1.2V

Minimum DC Current Gain hFE

110

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

4

Series

BFP640F

Standards/Approvals

No

Automotive Standard

No

The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.

Provides outstanding performance for a wide range of wireless applications

Ideal for CDMA and WLAN applications

High maximum stable gain

Gold metallization for extra high reliability

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