Infineon BFP420FH6327XTSA1 RF Bipolar Transistor, 60 mA NPN, 4.5 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1425
- Distrelec Article No.:
- 304-40-486
- Mfr. Part No.:
- BFP420FH6327XTSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 259-1425
- Distrelec Article No.:
- 304-40-486
- Mfr. Part No.:
- BFP420FH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 60mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Power Dissipation Pd | 210mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 25GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2mm | |
| Series | BFP420F | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 60mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Power Dissipation Pd 210mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 25GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2mm | ||
Series BFP420F | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon low noise high gain silicon bipolar RF transistor is based on Infineon's reliable very high volume 25 GHz silicon bipolar technology.
Popular in discrete oscillators
Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
Green package with visible leads
Related links
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