Infineon BFP420FH6327XTSA1 RF Bipolar Transistor, 60 mA NPN, 4.5 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1425
- Distrelec Article No.:
- 304-40-486
- Mfr. Part No.:
- BFP420FH6327XTSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 259-1425
- Distrelec Article No.:
- 304-40-486
- Mfr. Part No.:
- BFP420FH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 60mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 25GHz | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP420F | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 60mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 25GHz | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP420F | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon low noise high gain silicon bipolar RF transistor is based on Infineon's reliable very high volume 25 GHz silicon bipolar technology.
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Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
Green package with visible leads