Vishay TrenchFET P-Channel MOSFET, 12 A, 12 V, 6-Pin PowerPAK SC-70 SIA447DJ-T1-GE3
- RS Stock No.:
 - 787-9288
 - Mfr. Part No.:
 - SIA447DJ-T1-GE3
 - Brand:
 - Vishay
 
Subtotal (1 tape of 10 units)*
£2.59
(exc. VAT)
£3.11
(inc. VAT)
FREE delivery for orders over £50.00
- 2,060 unit(s) ready to ship
 - Plus 999,997,930 unit(s) shipping from 14 July 2026
 
Units  | Per unit  | Per Tape*  | 
|---|---|---|
| 10 - 90 | £0.259 | £2.59 | 
| 100 - 490 | £0.246 | £2.46 | 
| 500 - 990 | £0.22 | £2.20 | 
| 1000 - 2490 | £0.135 | £1.35 | 
| 2500 + | £0.124 | £1.24 | 
*price indicative
- RS Stock No.:
 - 787-9288
 - Mfr. Part No.:
 - SIA447DJ-T1-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 12 V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SC-70 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 71 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 19 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 52 nC @ 8 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 1.7mm | |
| Width | 1.7mm | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 12 A  | ||
Maximum Drain Source Voltage 12 V  | ||
Series TrenchFET  | ||
Package Type PowerPAK SC-70  | ||
Mounting Type Surface Mount  | ||
Pin Count 6  | ||
Maximum Drain Source Resistance 71 mΩ  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 0.4V  | ||
Maximum Power Dissipation 19 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -8 V, +8 V  | ||
Typical Gate Charge @ Vgs 52 nC @ 8 V  | ||
Transistor Material Si  | ||
Maximum Operating Temperature +150 °C  | ||
Number of Elements per Chip 1  | ||
Length 1.7mm  | ||
Width 1.7mm  | ||
Height 0.8mm  | ||
Minimum Operating Temperature -55 °C  | ||
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
Related links
- Vishay TrenchFET P-Channel MOSFET 12 V, 6-Pin PowerPAK SC-70 SIA447DJ-T1-GE3
 - Vishay P-Channel MOSFET 20 V, 6-Pin PowerPAK SC-70 SIA461DJ-T1-GE3
 - Vishay P-Channel MOSFET 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3
 - Vishay TrenchFET Dual N-Channel MOSFET 20 V, 8-Pin PowerPAK SC-70-6L Dual SIA938DJT-T1-GE3
 - Vishay P-Channel MOSFET 30 V PowerPAK SC-70 SIA4263DJ-T1-GE3
 - Vishay P-Channel MOSFET 20 V PowerPAK SC-70 SIA445EDJ-T1-GE3
 - Vishay TrenchFET P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
 - Vishay TrenchFET P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SISS23DN-T1-GE3
 
