Vishay TrenchFET P-Channel MOSFET, 4 A, 12 V, 6-Pin SOT-363 SI1401EDH-T1-GE3

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RS Stock No.:
180-7264
Mfr. Part No.:
SI1401EDH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

12 V

Series

TrenchFET

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.034 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V

Applications


• Cellular phone
• DSC
• GPS
• Load switch
• MP3
• PA switch and battery switch for portable devices
• Portable game console

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

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