Vishay TrenchFET P-Channel MOSFET, 4 A, 12 V, 6-Pin SOT-363 SI1401EDH-T1-GE3
- RS Stock No.:
- 180-7264
- Mfr. Part No.:
- SI1401EDH-T1-GE3
- Brand:
- Vishay
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 180-7264
- Mfr. Part No.:
- SI1401EDH-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 12 V | |
Package Type | SOT-363 | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 0.034 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-363 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 0.034 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V
Applications
• Cellular phone
• DSC
• GPS
• Load switch
• MP3
• PA switch and battery switch for portable devices
• Portable game console
• DSC
• GPS
• Load switch
• MP3
• PA switch and battery switch for portable devices
• Portable game console
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
Related links
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