Vishay EF N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3
- RS Stock No.:
- 200-6819
- Mfr. Part No.:
- SIHP186N60EF-GE3
- Brand:
- Vishay
Currently unavailable
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- RS Stock No.:
- 200-6819
- Mfr. Part No.:
- SIHP186N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A, 18 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220AB | |
| Series | EF | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.193 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A, 18 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220AB | ||
Series EF | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.193 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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