Vishay N-Channel MOSFET, 25 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSHA12ADN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£798.00

(exc. VAT)

£957.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.266£798.00

*price indicative

RS Stock No.:
188-4898
Mfr. Part No.:
SiSHA12ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

29.5 nC @ 10 V

Length

3.3mm

Width

3.3mm

Maximum Operating Temperature

+150 °C

Height

0.93mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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