Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 188-4870
- Mfr. Part No.:
- SIHA100N60E-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
£105.60
(exc. VAT)
£126.70
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 950 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.112 | £105.60 |
| 100 - 200 | £1.985 | £99.25 |
| 250 + | £1.795 | £89.75 |
*price indicative
- RS Stock No.:
- 188-4870
- Mfr. Part No.:
- SIHA100N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Height | 15.3mm | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Height 15.3mm | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIHA100N60E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power control in demanding electrical systems. It operates as an enhancement-mode device and is supplied in a through-hole TO-220 package with three pins for straightforward PCB mounting. The component is intended for use where robust voltage handling and practical assembly are required.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications
• 12A continuous drain current supports moderate load currents
• 0.1Ω Rds(on) reduces conduction losses during operation
• 33nC typical gate charge allows predictable switching behaviour
• 35W power dissipation permits substantial thermal load handling
• 150°C maximum operating temperature supports elevated-temperature use
• 12A continuous drain current supports moderate load currents
• 0.1Ω Rds(on) reduces conduction losses during operation
• 33nC typical gate charge allows predictable switching behaviour
• 35W power dissipation permits substantial thermal load handling
• 150°C maximum operating temperature supports elevated-temperature use
Applications
• Suitable for high-voltage motor drive stages in automation equipment
• Ideal for switch-mode power supplies handling elevated voltages
• Used for industrial inverter and converter switching elements
• Can be used for relay and contactor driver circuits in control panels
• Ideal for switch-mode power supplies handling elevated voltages
• Used for industrial inverter and converter switching elements
• Can be used for relay and contactor driver circuits in control panels
What mounting method is required for reliable installation?
The device uses a through-hole mounting style in a TO-220 body, providing a secure mechanical and thermal connection when soldered to a PCB and optionally bolted to a heatsink via the package tab.
How does gate voltage range affect control circuitry design?
The maximum gate-source rating is 30V, so gate drives should remain within this limit and typically operate at common logic-level voltages compatible with enhancement-mode N-channel control.
What environmental temperature extremes can it tolerate during operation?
It is rated to operate down to -55°C and up to 150°C, allowing use in both low-temperature and high-temperature industrial environments.
Are there regulatory or material considerations for disposal or reuse?
The component complies with RoHS, indicating restricted use of certain hazardous substances in its manufacture.
Related links
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220