Vishay N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-220 SIHA100N60E-GE3

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Packaging Options:
RS Stock No.:
188-4970
Mfr. Part No.:
SIHA100N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

10.3mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

15.3mm

E Series Power MOSFET.

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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