Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
178-3703
Mfr. Part No.:
SiZ350DT-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

2

Width

3mm

Length

3mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

RoHS Status: Exempt

TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL

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