Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 32.5 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- RS Stock No.:
- 228-2935
- Mfr. Part No.:
- SiZ254DT-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 10 units)*
£4.16
(exc. VAT)
£4.99
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 4,090 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.416 | £4.16 |
*price indicative
- RS Stock No.:
- 228-2935
- Mfr. Part No.:
- SiZ254DT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32.5A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0161Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32.5A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0161Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 70 V (D-S) MOSFET.
100 % Rg and UIS tested
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