Vishay P-Channel MOSFET, 4 A, 100 V, 3-Pin TO-220AB IRF9510PBF

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Subtotal (1 tube of 50 units)*

£27.70

(exc. VAT)

£33.25

(inc. VAT)

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  • 350 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£0.554£27.70
100 - 200£0.471£23.55
250 +£0.443£22.15

*price indicative

RS Stock No.:
178-0852
Mfr. Part No.:
IRF9510PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

8.7 nC @ 10 V

Length

10.41mm

Width

4.7mm

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements


MOSFET Transistors, Vishay Semiconductor

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