Vishay D Series N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK SIHD3N50D-GE3
- RS Stock No.:
 - 145-1656
 - Mfr. Part No.:
 - SIHD3N50D-GE3
 - Brand:
 - Vishay
 
Subtotal (1 tube of 50 units)*
£29.90
(exc. VAT)
£35.90
(inc. VAT)
FREE delivery for orders over £50.00
- Final 300 unit(s), ready to ship
 
Units  | Per unit  | Per Tube*  | 
|---|---|---|
| 50 - 50 | £0.598 | £29.90 | 
| 100 - 200 | £0.454 | £22.70 | 
| 250 + | £0.419 | £20.95 | 
*price indicative
- RS Stock No.:
 - 145-1656
 - Mfr. Part No.:
 - SIHD3N50D-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | D Series | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 3 A  | ||
Maximum Drain Source Voltage 500 V  | ||
Series D Series  | ||
Package Type DPAK (TO-252)  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 3.2 Ω  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 3V  | ||
Maximum Power Dissipation 104 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -30 V, +30 V  | ||
Number of Elements per Chip 1  | ||
Maximum Operating Temperature +150 °C  | ||
Width 6.22mm  | ||
Length 6.73mm  | ||
Typical Gate Charge @ Vgs 6 nC @ 10 V  | ||
Transistor Material Si  | ||
Minimum Operating Temperature -55 °C  | ||
Height 2.38mm  | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
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