Infineon 650V 8A, Rectifier & Schottky Diode, PG-VSON-4 IDL08G65C5XUMA2
- RS Stock No.:
- 258-0969
- Mfr. Part No.:
- IDL08G65C5XUMA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£2.64
(exc. VAT)
£3.17
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £2.64 |
| 10 - 24 | £2.38 |
| 25 - 49 | £2.22 |
| 50 - 99 | £2.06 |
| 100 + | £1.90 |
*price indicative
- RS Stock No.:
- 258-0969
- Mfr. Part No.:
- IDL08G65C5XUMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mounting Type | Surface Mount | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current | 8A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Series | IDL08G65C5 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Mounting Type Surface Mount | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current 8A | ||
Peak Reverse Repetitive Voltage 650V | ||
Series IDL08G65C5 | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Related links
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