MPN

Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4 IDL02G65C5XUMA2

RS Stock No.:: 249-6931
Mfr. Part No.:: IDL02G65C5XUMA2
Brand:: Infineon

Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4 IDL02G65C5XUMA2

Bulk discount available

Subtotal (1 pack of 2 units)*

£2.52

(exc. VAT)

£3.02

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 2,798 unit(s) shipping from 26 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£1.26	£2.52
20 - 48	£1.135	£2.27
50 - 98	£1.06	£2.12
100 - 198	£0.985	£1.97
200 +	£0.915	£1.83

*price indicative

RS Stock No.:: 249-6931
Mfr. Part No.:: IDL02G65C5XUMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Semiconductor
	Mount Type	Surface
	Package Type	PG-VSON-4
	Maximum Continuous Forward Current If	2A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Series	XDL02G65
	Rectifier Type	Silicon Carbide Diode
	Pin Count	5
	Peak Non-Repetitive Forward Surge Current Ifsm	21A
	Peak Reverse Current Ir	240μA
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	1.7V
	Maximum Operating Temperature	150°C
	Standards/Approvals	J-STD20 and JESD22
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Semiconductor
	Mount Type Surface
	Package Type PG-VSON-4
	Maximum Continuous Forward Current If 2A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Series XDL02G65
	Rectifier Type Silicon Carbide Diode
	Pin Count 5
	Peak Non-Repetitive Forward Surge Current Ifsm 21A
	Peak Reverse Current Ir 240μA
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 1.7V
	Maximum Operating Temperature 150°C
	Standards/Approvals J-STD20 and JESD22
	Automotive Standard No

Datasheet - IDL02G65C5XUMA2

The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

High surge current capability

Pb-free lead plating

RoHS compliant

Qualified according to JEDEC1 for target applications

Breakdown voltage tested at 4.5 mA2

Optimized for high temperature operation