Infineon 4V 110mA, Diode, TSSLP BAT2402LSE6327XTSA1
- RS Stock No.:
- 258-0640
- Mfr. Part No.:
- BAT2402LSE6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 15000 units)*
£5,805.00
(exc. VAT)
£6,960.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,990,000 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
15000 + | £0.387 | £5,805.00 |
*price indicative
- RS Stock No.:
- 258-0640
- Mfr. Part No.:
- BAT2402LSE6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Mounting Type | Surface Mount | |
Package Type | TSSLP | |
Maximum Continuous Forward Current | 110mA | |
Peak Reverse Repetitive Voltage | 4V | |
Diode Configuration | Single | |
Select all | ||
---|---|---|
Brand Infineon | ||
Mounting Type Surface Mount | ||
Package Type TSSLP | ||
Maximum Continuous Forward Current 110mA | ||
Peak Reverse Repetitive Voltage 4V | ||
Diode Configuration Single | ||
The Infineon RF Schottky diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz.
Low inductance LS of 0.2 nH
Low capacitance C of 0.2 pF at 1 MHz
TSSLP-2-1 package with a 0201 footprint
Pb-free (RoHS compliant) and halogen free
Low capacitance C of 0.2 pF at 1 MHz
TSSLP-2-1 package with a 0201 footprint
Pb-free (RoHS compliant) and halogen free
Related links
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