Infineon 4V 110mA, Diode, TSSLP BAT2402LSE6327XTSA1

The Infineon RF Schottky diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz.

Low inductance LS of 0.2 nH
Low capacitance C of 0.2 pF at 1 MHz
TSSLP-2-1 package with a 0201 footprint
Pb-free (RoHS compliant) and halogen free