Infineon 4V 110mA, Diode, TSSLP BAT2402LSE6327XTSA1

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Subtotal (1 reel of 15000 units)*

£5,805.00

(exc. VAT)

£6,960.00

(inc. VAT)

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Units
Per unit
Per Reel*
15000 +£0.387£5,805.00

*price indicative

RS Stock No.:
258-0640
Mfr. Part No.:
BAT2402LSE6327XTSA1
Brand:
Infineon
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Brand

Infineon

Mounting Type

Surface Mount

Package Type

TSSLP

Maximum Continuous Forward Current

110mA

Peak Reverse Repetitive Voltage

4V

Diode Configuration

Single

The Infineon RF Schottky diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz.

Low inductance LS of 0.2 nH
Low capacitance C of 0.2 pF at 1 MHz
TSSLP-2-1 package with a 0201 footprint
Pb-free (RoHS compliant) and halogen free


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