Infineon 4V 110mA, Diode, TSLP BAT1502ELE6327XTMA1

Subtotal (1 reel of 15000 units)*

£2,385.00

(exc. VAT)

£2,865.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
15000 +£0.159£2,385.00

*price indicative

RS Stock No.:
258-0636
Mfr. Part No.:
BAT1502ELE6327XTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Mounting Type

Surface Mount

Package Type

TSLP

Maximum Continuous Forward Current

110mA

Peak Reverse Repetitive Voltage

4V

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

TSLP-2-19 package with a 0402 foot print
Pb-free, RoHS compliant and halogen-free


Related links