Infineon 4V 110mA, Diode, TSLP BAT1502ELE6327XTMA1

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Subtotal (1 pack of 10 units)*

£3.35

(exc. VAT)

£4.02

(inc. VAT)

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  • 14,020 unit(s) ready to ship
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Units
Per unit
Per Pack*
10 - 90£0.335£3.35
100 - 240£0.318£3.18
250 - 490£0.305£3.05
500 - 990£0.291£2.91
1000 +£0.271£2.71

*price indicative

Packaging Options:
RS Stock No.:
258-0637
Mfr. Part No.:
BAT1502ELE6327XTMA1
Brand:
Infineon
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Brand

Infineon

Mounting Type

Surface Mount

Package Type

TSLP

Maximum Continuous Forward Current

110mA

Peak Reverse Repetitive Voltage

4V

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

TSLP-2-19 package with a 0402 foot print
Pb-free, RoHS compliant and halogen-free


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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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