Infineon 4 V 110 mA Diode 3-Pin SOT-323 BAT1504WH6327XTSA1
- RS Stock No.:
- 261-3918
- Mfr. Part No.:
- BAT1504WH6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
£6.28
(exc. VAT)
£7.54
(inc. VAT)
FREE delivery for orders over £60.00
Limited stock
- 20 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.314 | £6.28 |
| 200 - 480 | £0.295 | £5.90 |
| 500 - 980 | £0.277 | £5.54 |
| 1000 - 1980 | £0.257 | £5.14 |
| 2000 + | £0.239 | £4.78 |
*price indicative
- RS Stock No.:
- 261-3918
- Mfr. Part No.:
- BAT1504WH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOT-323 | |
| Maximum Continuous Forward Current If | 110mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Diode Configuration | Series | |
| Series | BAT15-04W | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 0.32V | |
| Peak Reverse Current Ir | 5μA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOT-323 | ||
Maximum Continuous Forward Current If 110mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Diode Configuration Series | ||
Series BAT15-04W | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 0.32V | ||
Peak Reverse Current Ir 5μA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
Related links
- Infineon 4 V 110 mA Diode 3-Pin SOT-323
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