Infineon 4V 110mA, Dual Schottky Diode, 3-Pin SOT323-3 BAT1504WH6327XTSA1

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Subtotal (1 pack of 20 units)*

£7.62

(exc. VAT)

£9.14

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 180£0.381£7.62
200 - 480£0.358£7.16
500 - 980£0.336£6.72
1000 - 1980£0.312£6.24
2000 +£0.29£5.80

*price indicative

Packaging Options:
RS Stock No.:
261-3918
Mfr. Part No.:
BAT1504WH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Mounting Type

Surface Mount

Package Type

SOT323-3

Maximum Continuous Forward Current

110mA

Peak Reverse Repetitive Voltage

4V

Series

BAT15-04W

Diode Configuration

Series

Diode Type

Schottky

Pin Count

3

Number of Elements per Chip

2

The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

RoHS compliant and halogen-free
Low capacitance and inductance

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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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