Infineon 1200V 30A, SiC Schottky Diode, 2-Pin TO-247 IDWD30G120C5XKSA1
- RS Stock No.:
- 222-4844
- Mfr. Part No.:
- IDWD30G120C5XKSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£4.73
(exc. VAT)
£5.68
(inc. VAT)
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In Stock
- 175 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £4.73 |
*price indicative
- RS Stock No.:
- 222-4844
- Mfr. Part No.:
- IDWD30G120C5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mounting Type | SMD | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current | 30A | |
| Peak Reverse Repetitive Voltage | 1200V | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Pin Count | 2 | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Mounting Type SMD | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current 30A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 2 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
Related links
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