onsemi 650 V 8 A SiC Schottky Schottky 5-Pin PQFN
- RS Stock No.:
- 214-8795
- Mfr. Part No.:
- FFSM0865B
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£2,898.00
(exc. VAT)
£3,477.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.966 | £2,898.00 |
*price indicative
- RS Stock No.:
- 214-8795
- Mfr. Part No.:
- FFSM0865B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | SiC Schottky | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 40μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type SiC Schottky | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 40μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Width 8 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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