Infineon 650V SiC Schottky Rectifier & Schottky Diode, ThinPAK 8x8 IDL10G65C5XUMA2
- RS Stock No.:
- 244-2890
- Mfr. Part No.:
- IDL10G65C5XUMA2
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£3,216.00
(exc. VAT)
£3,858.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.072 | £3,216.00 |
*price indicative
- RS Stock No.:
- 244-2890
- Mfr. Part No.:
- IDL10G65C5XUMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Package Type | ThinPAK 8x8 | |
| Peak Reverse Repetitive Voltage | 650V | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Diode Technology | SiC Schottky | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Package Type ThinPAK 8x8 | ||
Peak Reverse Repetitive Voltage 650V | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Diode Technology SiC Schottky | ||
The Infineon IDL10G65C5XUMA2 generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improvedefficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
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