Infineon N-Channel MOSFET, 24 A, 650 V, 5-Pin ThinPAK 8 x 8 IPL65R115CFD7AUMA1
- RS Stock No.:
- 240-6617
- Mfr. Part No.:
- IPL65R115CFD7AUMA1
- Brand:
- Infineon
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£3.97
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£4.76
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Units | Per unit |
|---|---|
| 1 - 9 | £3.97 |
| 10 - 24 | £3.77 |
| 25 - 49 | £3.61 |
| 50 - 99 | £3.45 |
| 100 + | £3.18 |
*price indicative
- RS Stock No.:
- 240-6617
- Mfr. Part No.:
- IPL65R115CFD7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | ThinPAK 8 x 8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type ThinPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Number of Elements per Chip 1 | ||
The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Significantly reduced switching losses compared to competition
Extra safety margin for designs with increased bus voltage
Improved full-load efficiency in industrial SMPS applications
High power density
Extra safety margin for designs with increased bus voltage
Improved full-load efficiency in industrial SMPS applications
High power density
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