onsemi 650 V 25 A Diode Schottky 2-Pin TO-247 FFSH2065A
- RS Stock No.:
- 178-4433
- Mfr. Part No.:
- FFSH2065A
- Brand:
- onsemi
Subtotal (1 unit)*
£2.52
(exc. VAT)
£3.02
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 37 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | £2.52 |
*price indicative
- RS Stock No.:
- 178-4433
- Mfr. Part No.:
- FFSH2065A
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 25A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 600μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Diameter | 6.85 mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 25A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 600μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Diameter 6.85 mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
Related links
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