onsemi 650V 10A, SiC Schottky Diode, 2-Pin TO-247 FFSH1065B-F085
- RS Stock No.:
- 189-0178
- Mfr. Part No.:
- FFSH1065B-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
£119.85
(exc. VAT)
£143.82
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 - 90 | £3.995 | £119.85 |
120 - 240 | £3.887 | £116.61 |
270 - 480 | £3.785 | £113.55 |
510 - 990 | £3.688 | £110.64 |
1020 + | £3.595 | £107.85 |
*price indicative
- RS Stock No.:
- 189-0178
- Mfr. Part No.:
- FFSH1065B-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Mounting Type | Through Hole | |
Package Type | TO-247 | |
Maximum Continuous Forward Current | 10A | |
Peak Reverse Repetitive Voltage | 650V | |
Diode Configuration | Single | |
Rectifier Type | Schottky Diode | |
Diode Type | SiC Schottky | |
Pin Count | 2 | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Peak Non-Repetitive Forward Surge Current | 600 (Peak)A | |
Select all | ||
---|---|---|
Brand onsemi | ||
Mounting Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current 10A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 2 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 600 (Peak)A | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
Related links
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