Infineon CoolMOS™ CFD7 N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R075CFD7AUMA1
- RS Stock No.:
- 222-4912
- Mfr. Part No.:
- IPL60R075CFD7AUMA1
- Brand:
- Infineon
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£9.15
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£10.98
(inc. VAT)
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- 3,698 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £4.575 | £9.15 |
20 - 48 | £4.065 | £8.13 |
50 - 98 | £3.795 | £7.59 |
100 - 198 | £3.525 | £7.05 |
200 + | £3.29 | £6.58 |
*price indicative
- RS Stock No.:
- 222-4912
- Mfr. Part No.:
- IPL60R075CFD7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 600 V | |
Series | CoolMOS™ CFD7 | |
Package Type | ThinPAK 8 x 8 | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 75 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ CFD7 | ||
Package Type ThinPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS™ CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Related links
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