Infineon N-Channel MOSFET, 27 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R125P7AUMA1
- RS Stock No.:
- 217-2538
- Mfr. Part No.:
- IPL60R125P7AUMA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£9.48
(exc. VAT)
£11.375
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,940 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
5 + | £1.896 | £9.48 |
*price indicative
- RS Stock No.:
- 217-2538
- Mfr. Part No.:
- IPL60R125P7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 27 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | ThinPAK 8 x 8 | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 125 mO | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type ThinPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 125 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Suitable for hard and soft switching(PFC and LLC)due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
Better RDS(on)/package products compared to competition enabled by a
low RDS(on)*A(below1Ohm*mm²)
Fully qualified acc. JEDEC for Industrial Applications
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
Better RDS(on)/package products compared to competition enabled by a
low RDS(on)*A(below1Ohm*mm²)
Fully qualified acc. JEDEC for Industrial Applications
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