OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8
- RS Stock No.:
- 177-5573
- Mfr. Part No.:
- UV-035EQ
- Brand:
- OSI Optoelectronics
Subtotal (1 tray of 5 units)*
£268.06
(exc. VAT)
£321.67
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 140 unit(s) shipping from 16 October 2025
- Plus 30 unit(s) shipping from 12 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
---|---|---|
5 + | £53.612 | £268.06 |
*price indicative
- RS Stock No.:
- 177-5573
- Mfr. Part No.:
- UV-035EQ
- Brand:
- OSI Optoelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | OSI Optoelectronics | |
Spectrums Detected | Ultraviolet | |
Wavelength of Peak Sensitivity | 720nm | |
Package Type | TO-8 | |
Amplifier Function | No | |
Mounting Type | Through Hole | |
Number of Pins | 2 | |
Diode Material | Si | |
Height | 5.21mm | |
Peak Photo Sensitivity | 0.14A/W | |
Diameter | 13.97mm | |
Polarity | Reverse | |
Select all | ||
---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Ultraviolet | ||
Wavelength of Peak Sensitivity 720nm | ||
Package Type TO-8 | ||
Amplifier Function No | ||
Mounting Type Through Hole | ||
Number of Pins 2 | ||
Diode Material Si | ||
Height 5.21mm | ||
Peak Photo Sensitivity 0.14A/W | ||
Diameter 13.97mm | ||
Polarity Reverse | ||
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
Related links
- OSI Optoelectronics Through Hole TO-8
- OSI Optoelectronics Through Hole Ceramic
- OSI Optoelectronics Through Hole Low Profile
- OSI Optoelectronics Through Hole Ceramic
- OSI Optoelectronics Through Hole TO-8
- OSI Optoelectronics Through Hole TO-8
- OSI Optoelectronics Through Hole TO-8
- OSI Optoelectronics Through Hole TO-8