OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

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£162.02

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RS Stock No.:
183-7173
Mfr. Part No.:
OSD60-5T
Brand:
OSI Optoelectronics
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Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

436nm

Package Type

TO-8

Amplifier Function

No

Mounting Type

Through Hole

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.17in

Peak Photo Sensitivity

0.21A/W

Diameter

13.97mm

Typical Rise Time

30µs

Series

OSD

Polarity

Reverse

COO (Country of Origin):
MY
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or chopped light.To achieve high speeds, these detectors should be reverse biased. Typical response times from 10 ns to 250 ns can be achieved with a 10V reverse bias, for example. When a reverse bias is applied, capacitance decreases (as seen in the figure below) corresponding directly to an increase in speed. As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.Since a reverse bias generates additional dark current, the noise in the device will also increase with applied bias. For lower noise detectors, the Photovoltaic Series should be considered.

High Speed Response
Low Capacitance
Low Dark Current
Wide Dynamic Range
High Responsivity
APPLICATIONS
Pulse Detectors
Optical Communications
Bar Code Readers
Optical Remote Control
Medical Equipment
High Speed Photometry

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