OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic
- RS Stock No.:
- 177-5563
- Mfr. Part No.:
- PIN-UV-100DQC
- Brand:
- OSI Optoelectronics
Subtotal (1 box of 2 units)*
£354.97
(exc. VAT)
£425.964
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 14 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
---|---|---|
2 + | £177.485 | £354.97 |
*price indicative
- RS Stock No.:
- 177-5563
- Mfr. Part No.:
- PIN-UV-100DQC
- Brand:
- OSI Optoelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | OSI Optoelectronics | |
Spectrums Detected | Ultraviolet | |
Wavelength of Peak Sensitivity | 980nm | |
Package Type | Ceramic | |
Mounting Type | Through Hole | |
Amplifier Function | No | |
Number of Pins | 2 | |
Diode Material | Si | |
Minimum Wavelength Detected | 190nm | |
Maximum Wavelength Detected | 1100nm | |
Length | 16.51mm | |
Width | 14.99mm | |
Height | 2.03mm | |
Peak Photo Sensitivity | 0.5A/W | |
Polarity | Reverse | |
Select all | ||
---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Ultraviolet | ||
Wavelength of Peak Sensitivity 980nm | ||
Package Type Ceramic | ||
Mounting Type Through Hole | ||
Amplifier Function No | ||
Number of Pins 2 | ||
Diode Material Si | ||
Minimum Wavelength Detected 190nm | ||
Maximum Wavelength Detected 1100nm | ||
Length 16.51mm | ||
Width 14.99mm | ||
Height 2.03mm | ||
Peak Photo Sensitivity 0.5A/W | ||
Polarity Reverse | ||
- COO (Country of Origin):
- US
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
Related links
- OSI Optoelectronics Through Hole Ceramic
- OSI Optoelectronics Through Hole Ceramic
- OSI Optoelectronics Through Hole Ceramic
- OSI Optoelectronics, PIN DL-10 Si Photodiode
- OSI Optoelectronics Surface Mount BNC
- OSI Optoelectronics Through Hole TO-8
- OSI Optoelectronics Through Hole TO-18
- OSI Optoelectronics Through Hole TO-5