OSI Optoelectronics, PIN-RD100 Visible Light Si Photodiode, Through Hole Ceramic

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Subtotal (1 unit)*

£118.65

(exc. VAT)

£142.38

(inc. VAT)

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1 - 4£118.65
5 - 9£112.48
10 - 24£107.02
25 +£100.37

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RS Stock No.:
176-9787
Mfr. Part No.:
PIN-RD100
Brand:
OSI Optoelectronics
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Brand

OSI Optoelectronics

Spectrums Detected

Visible Light

Wavelength of Peak Sensitivity

950nm

Package Type

Ceramic

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

2

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Length

16.51mm

Width

14.986mm

Height

2.032mm

Peak Photo Sensitivity

0.6A/W

Typical Rise Time

40ns

Shunt Resistance

Series

PIN

RoHS Status: Exempt

COO (Country of Origin):
US
These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions.

Product Applications
Laser Applications
Control Systems
Electron Detection
High Energy Physics
Medical Instrumentation
Product Features
Large Active Area
Fully Depleteable
Fast Response
Ultra Low Dark Current

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