OSI Optoelectronics, PIN-RD100 Visible Light Si Photodiode, Through Hole Ceramic
- RS Stock No.:
- 176-9787
- Mfr. Part No.:
- PIN-RD100
- Brand:
- OSI Optoelectronics
Bulk discount available
Subtotal (1 unit)*
£118.65
(exc. VAT)
£142.38
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 4 | £118.65 |
5 - 9 | £112.48 |
10 - 24 | £107.02 |
25 + | £100.37 |
*price indicative
- RS Stock No.:
- 176-9787
- Mfr. Part No.:
- PIN-RD100
- Brand:
- OSI Optoelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | OSI Optoelectronics | |
Spectrums Detected | Visible Light | |
Wavelength of Peak Sensitivity | 950nm | |
Package Type | Ceramic | |
Mounting Type | Through Hole | |
Amplifier Function | No | |
Number of Pins | 2 | |
Diode Material | Si | |
Minimum Wavelength Detected | 350nm | |
Maximum Wavelength Detected | 1100nm | |
Length | 16.51mm | |
Width | 14.986mm | |
Height | 2.032mm | |
Peak Photo Sensitivity | 0.6A/W | |
Typical Rise Time | 40ns | |
Shunt Resistance | 1Ω | |
Series | PIN | |
Select all | ||
---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Visible Light | ||
Wavelength of Peak Sensitivity 950nm | ||
Package Type Ceramic | ||
Mounting Type Through Hole | ||
Amplifier Function No | ||
Number of Pins 2 | ||
Diode Material Si | ||
Minimum Wavelength Detected 350nm | ||
Maximum Wavelength Detected 1100nm | ||
Length 16.51mm | ||
Width 14.986mm | ||
Height 2.032mm | ||
Peak Photo Sensitivity 0.6A/W | ||
Typical Rise Time 40ns | ||
Shunt Resistance 1Ω | ||
Series PIN | ||
RoHS Status: Exempt
- COO (Country of Origin):
- US
These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions.
Product Applications
Laser Applications
Control Systems
Electron Detection
High Energy Physics
Medical Instrumentation
Product Features
Large Active Area
Fully Depleteable
Fast Response
Ultra Low Dark Current
Laser Applications
Control Systems
Electron Detection
High Energy Physics
Medical Instrumentation
Product Features
Large Active Area
Fully Depleteable
Fast Response
Ultra Low Dark Current
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