OSI Optoelectronics, UV-100L Si Photodiode, Through Hole Low Profile

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Subtotal (1 unit)*

£142.46

(exc. VAT)

£170.95

(inc. VAT)

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1 - 4£142.46
5 - 9£135.05
10 - 24£128.36
25 +£123.51

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RS Stock No.:
176-9786
Mfr. Part No.:
UV-100L
Brand:
OSI Optoelectronics
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Brand

OSI Optoelectronics

Wavelength of Peak Sensitivity

254nm

Package Type

Low Profile

Amplifier Function

No

Mounting Type

Through Hole

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

UV-100L

Maximum Wavelength Detected

254nm

Length

24.76mm

Height

4.826mm

Peak Photo Sensitivity

0.14A/W

Diameter

25.4mm

Typical Rise Time

5.9ns

Series

UV

Shunt Resistance

10000KΩ

RoHS Status: Exempt

COO (Country of Origin):
US
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.

Product Applications
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response

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