onsemi N-Channel MOSFET, 37 A, 40 V, 5-Pin DFN NTMFS5C468NLT1G
- RS Stock No.:
- 922-9578P
- Mfr. Part No.:
- NTMFS5C468NLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£18.375
(exc. VAT)
£22.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 8,325 unit(s), ready to ship
Units | Per unit |
|---|---|
| 125 - 475 | £0.147 |
| 500 - 1225 | £0.144 |
| 1250 - 3725 | £0.14 |
| 3750 + | £0.136 |
*price indicative
- RS Stock No.:
- 922-9578P
- Mfr. Part No.:
- NTMFS5C468NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 37 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 17.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 28 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 7.3 nC @ 10 V | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 5.1mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 37 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 17.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 28 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 7.3 nC @ 10 V | ||
Width 6.1mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 5.1mm | ||
Number of Elements per Chip 1 | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
N-Channel Power MOSFET, 40V, ON Semiconductor
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