DiodesZetex DMN Type N-Channel MOSFET, 2.5 A, 60 V Enhancement, 3-Pin SOT-23 DMN6075S-7
- RS Stock No.:
- 921-1280
- Mfr. Part No.:
- DMN6075S-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)*
£8.35
(exc. VAT)
£10.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 150 unit(s) shipping from 05 January 2026
- Plus 750 unit(s) shipping from 05 January 2026
- Plus 20,850 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.167 | £8.35 |
| 250 - 950 | £0.146 | £7.30 |
| 1000 - 1950 | £0.142 | £7.10 |
| 2000 - 2950 | £0.139 | £6.95 |
| 3000 + | £0.135 | £6.75 |
*price indicative
- RS Stock No.:
- 921-1280
- Mfr. Part No.:
- DMN6075S-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.3nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.15W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.3nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.15W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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