DiodesZetex DMN Type N-Channel MOSFET, 1.6 A, 100 V Enhancement, 4-Pin SOT-23 DMN10H220L-7
- RS Stock No.:
- 921-1048
- Mfr. Part No.:
- DMN10H220L-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 30 units)*
£8.04
(exc. VAT)
£9.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 150 unit(s) shipping from 05 January 2026
- Plus 2,850 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 120 | £0.268 | £8.04 |
| 150 - 420 | £0.236 | £7.08 |
| 450 - 870 | £0.228 | £6.84 |
| 900 - 2970 | £0.223 | £6.69 |
| 3000 + | £0.217 | £6.51 |
*price indicative
- RS Stock No.:
- 921-1048
- Mfr. Part No.:
- DMN10H220L-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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