Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
- RS Stock No.:
- 921-1048
- Mfr. Part No.:
- DMN10H220L-7
- Brand:
- DiodesZetex
Subtotal (1 pack of 30 units)*
£8.04
(exc. VAT)
£9.66
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 180 unit(s) shipping from 01 October 2025
- Plus 2,850 unit(s) shipping from 05 November 2025
Units | Per unit | Per Pack* |
---|---|---|
30 - 120 | £0.268 | £8.04 |
150 - 420 | £0.236 | £7.08 |
450 - 870 | £0.228 | £6.84 |
900 - 2970 | £0.223 | £6.69 |
3000 + | £0.217 | £6.51 |
*price indicative
- RS Stock No.:
- 921-1048
- Mfr. Part No.:
- DMN10H220L-7
- Brand:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.6 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 250 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Transistor Material | Si | |
Width | 1.4mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 8.3 nC @ 10 V | |
Length | 3mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.6 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.3 nC @ 10 V | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
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