N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Diodes Inc DMN10H099SK3-13
- RS Stock No.:
- 921-1044
- Mfr. Part No.:
- DMN10H099SK3-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 20 units)**
£8.64
(exc. VAT)
£10.36
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
---|---|---|
20 - 80 | £0.432 | £8.64 |
100 - 480 | £0.411 | £8.22 |
500 - 980 | £0.367 | £7.34 |
1000 - 2480 | £0.346 | £6.92 |
2500 + | £0.324 | £6.48 |
**price indicative
- RS Stock No.:
- 921-1044
- Mfr. Part No.:
- DMN10H099SK3-13
- Brand:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 99 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 34 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.2mm | |
Number of Elements per Chip | 1 | |
Width | 6.7mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 25.2 nC @ 10 V | |
Height | 2.39mm | |
Forward Diode Voltage | 0.77V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.2mm | ||
Number of Elements per Chip 1 | ||
Width 6.7mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 25.2 nC @ 10 V | ||
Height 2.39mm | ||
Forward Diode Voltage 0.77V | ||
Minimum Operating Temperature -55 °C | ||
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