Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET, Q-Class

Package Type

PLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

1 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

5.21mm

Minimum Operating Temperature

-55 °C

Height

21.34mm