IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

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Subtotal (1 tube of 25 units)*

£606.375

(exc. VAT)

£727.65

(inc. VAT)

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  • 400 unit(s) ready to ship
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Units
Per unit
Per Tube*
25 +£24.255£606.375

*price indicative

RS Stock No.:
920-0877
Mfr. Part No.:
IXFK26N120P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-264

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

460 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

19.96mm

Typical Gate Charge @ Vgs

225 nC @ 10 V

Width

5.13mm

Minimum Operating Temperature

-55 °C

Height

26.16mm

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